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1 back-gate mos
MOS design — МОП-структура; МОП-прибор
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2 back-gate MOS
МОП структура с нижними затворамиБольшой англо-русский и русско-английский словарь > back-gate MOS
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3 back-gate MOS
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4 back gate MOS
Техника: МОП-структура с нижним затвором -
5 back-gate MOS
Техника: МОП-структура с нижними затворами -
6 back-gate mos
Техника: МОП-структура с нижними затворами -
7 back gate MOS
Engineering: BMOS -
8 back-gate MOS
МОН-структура з нижнім затворомEnglish-Ukrainian dictionary of microelectronics > back-gate MOS
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9 back-gate MOS
English-Russian dictionary of microelectronics > back-gate MOS
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10 back-gate mos
English-Russian dictionary of microelectronics > back-gate mos
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11 MOS
I сокр. от mean opinion score II сокр. от metal-oxide-semiconductorструктура (типа) металл - оксид - полупроводник, МОП-структура-
adjustable-threshold MOS
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aluminum-gate MOS
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back-gate MOS
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beam-addressed MOS
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bipolar MOS
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bulk complementary MOS
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buried channel MOS
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buried-oxide MOS
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clocked complementary MOS
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complementary MOS
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depletion MOS
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dielectric insulated MOS
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dielectric isolated MOS
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diffusion self-aligned MOS
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double polysilicon MOS
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double poly MOS
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double-diffused MOS
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double-implanted MOS
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dynamic complementary MOS
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enhancement MOS
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enhancement/depletion MOS
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floating-gate avalanche injection MOS
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floating-gate MOS
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high-density MOS
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high-performance complementery MOS
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high-threshold MOS
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high-voltage MOS
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insulated gate MOS
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ion-implanted MOS
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isolated gate MOS
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junction gate MOS
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lateral planar MOS
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local oxidation MOS
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long MOS
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low-threshold MOS
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metal-gate MOS
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micrometer MOS
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micron MOS
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n-channel MOS
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p-channel MOS
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polysilicon self-aligned MOS
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poly self-aligned MOS
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power MOS
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quadruple self-aligned MOS
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refractory MOS
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resistive-gate MOS
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scaled-down MOS
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scaled MOS
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Schottky-barrier MOS
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self-aligned MOS
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silicon-gate technology MOS
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silicon-gate MOS
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silicon-on-sapphire complementary MOS
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stacked transistors complementary MOS
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submicrometer MOS
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submicron MOS
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surface gate MOS
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three-dimensional MOS
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transverse MOS
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triple-polysilicon MOS
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triple-poly MOS
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V-groove MOS
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V MOS -
12 MOS
структура метал–оксид–напівпровідник, МОН-структура - aluminum-gate MOS
- avalanche-injection stacked gate MOS
- avalanche stacked gate MOS
- back-gate MOS
- bulk complementary MOS
- buried-channel MOS
- buried-oxide MOS
- clocked complementary MOS
- complementary symmetry MOS
- complementary MOS
- composite-gate MOS
- depletion MOS
- dielectric-insulated MOS
- dielectric-isolated MOS
- double-diffused MOS
- double-implanted MOS
- double-level polysilicon MOS
- elevated-electrode MOS
- enhancement MOS
- floating-gate MOS
- grooved-gate MOS
- high-threshold MOS
- high-voltage MOS
- ion-implanted MOS
- lateral-merged bipolar MOS
- low-threshold MOS
- merged MOS
- multigate MOS
- n-channelMOS
- nMOS
- p-channelMOS
- pMOS
- polycrystalline silicon-gate MOS
- quadruply self-aligned MOS
- refractory MOS
- resistive-gate MOS
- scaled MOS
- Schottky-barrier MOS
- self-aligned MOS
- silicon-gate MOS
- single-channel MOS
- single-poly gate MOS
- substrate-fed MOS
- vertical MOS
- V-groove MOS
- V-notch MOS -
13 gate
1) логический элемент, ЛЭ; (логическая) схема; проф. вентиль; шлюз || управлять (напр. работой устройства) с помощью логических элементов или логических схем; использовать логические элементы или логические схемы2) селекторный импульс, стробирующий импульс, строб-импульс || осуществлять селекцию во времени; стробировать4) затвор (напр. полевого транзистора)5) пп управляющий электрод (напр. тиристора)•to gate in — вводить ( сигнал)
to gate out — выделять ( сигнал)
- gate A20- alternative denial gate
- amplitude gate
- AND gate
- AND-INVERT gate
- AND-NOT gate
- anode gate
- back gate
- biconditional gate
- binary-logic gate
- bottom gate
- burst gate
- call gate
- capacitor-resistor-diode gate
- cathode gate
- clocked gate
- CML gate
- coincidence gate
- complement gate
- conjunction gate
- control gate
- CRD gate
- current-field-access swap gate
- current-mode gate
- current-mode logic gate
- difference gate
- diode gate
- diode-transistor logic gate
- discrete gate
- disjunction gate
- dispersion gate
- diversity gate
- DTL gate
- dual gate
- EITHER-OR gate
- emitter-coupled gate
- enabling gate
- equality gate
- equivalence gate
- equivalent gate
- except gate
- exclusive NOR gate
- exclusive OR gate
- fault-free gate
- faulty gate
- ferroelectric light gate
- film gate
- floating gate
- flux gate
- GaAs logic gate
- guard gate
- IC logic gate
- identity gate
- if-A-then-NOT-B gate
- I2L gate
- in gate
- inclusive NOR gate
- inclusive OR gate
- indicator gate
- information gate
- inhibition gate
- input gate
- insulated gate
- integrated injection logic gate
- interrupt gate
- inverting logic gate
- joint denial gate
- Josephson logic gate
- Josephson-junction logic gate
- junction gate
- latching Boolean gate
- logic gate
- logical gate
- magnetic gate
- majority gate
- match gate
- meshed gate
- metal gate
- metal-oxide-semiconductor gate
- mix gate
- molibdenum gate
- MOS gate
- multiemitter gate
- multiple-level gate
- multiple-level logic gate
- NAND gate
- n-channel silicon gate
- negation gate
- negative AND -gate
- negative OR gate
- negative unate gate
- NEITHER-NOR gate
- N-input gate
- nitride gate
- NMOS silicon gate
- noise gate
- nonconjunction gate
- nondisjunction gate
- nonequality gate
- nonequivalence gate
- nonunate gate
- NOR gate
- NOT gate
- NOT-AND gate
- one-nanosecond gate
- opaque gate
- optical gate
- OR gate
- OTHER-OR gate
- out gate
- outer gate
- overlapping gates
- p-channel silicon gate
- PMOS silicon gate
- p-n junction gate
- polysilicon gate
- positive unate gate
- primitive logic gate
- pulse gate
- range gate
- readout gate
- refractory gate
- replicate gate
- resistive insulated gate
- resistively connected gates
- resistor-transistor logic gate
- RTL gate
- sampling gate
- scan gate
- sealed gate
- searching gate
- self-aligned gate
- self-registered gate
- Shottky gate
- Shottky-barrier gate
- silicon gate
- stacked gate
- stated gate
- stateful gate
- stateless gate
- storage gate
- substrate gate
- swap gate
- synchronous gate
- task gate
- threshold gate
- thyratron gate
- time gate
- T2L gate
- top gate
- transfer gate
- transistor-transistor logic gate
- trap gate
- TTL gate
- tunneling cryotron gate
- variable-threshold gate
- V-groove MOS gate
- video gate
- VMOS gate
- write gate
- XNOR gate
- XOR gate
- zero-match gate -
14 gate
1) логический элемент, ЛЭ; (логическая) схема; проф. вентиль; шлюз || управлять (напр. работой устройства) с помощью логических элементов или логических схем; использовать логические элементы или логические схемы2) селекторный импульс, стробирующий импульс, строб-импульс || осуществлять селекцию во времени; стробировать4) затвор (напр. полевого транзистора)5) пп. управляющий электрод (напр. тиристора)•to gate in — вводить ( сигнал)
- amplitude gateto gate out — выделять ( сигнал), to gate through пропускать ( сигнал)
- AND gate
- AND-INVERT gate
- AND-NOT gate
- anode gate
- back gate
- biconditional gate
- binary-logic gate
- bottom gate
- burst gate
- call gate
- capacitor-resistor-diode gate
- cathode gate
- clocked gate
- CML gate
- coincidence gate
- complement gate
- conjunction gate
- control gate
- CRD gate
- current-field-access swap gate
- current-mode gate
- current-mode logic gate
- difference gate
- diode gate
- diode-transistor logic gate
- discrete gate
- disjunction gate
- dispersion gate
- diversity gate
- DTL gate
- dual gate
- EITHER-OR gate
- emitter-coupled gate
- enabling gate
- equality gate
- equivalence gate
- equivalent gate
- except gate
- exclusive NOR gate
- exclusive OR gate
- fault-free gate
- faulty gate
- ferroelectric light gate
- film gate
- floating gate
- flux gate
- GaAs logic gate
- gate A20
- guard gate
- I2L gate
- IC logic gate
- identity gate
- if-A-then-NOT-B gate
- in gate
- inclusive NOR gate
- inclusive OR gate
- indicator gate
- information gate
- inhibition gate
- input gate
- insulated gate
- integrated injection logic gate
- interrupt gate
- inverting logic gate
- joint denial gate
- Josephson logic gate
- Josephson-junction logic gate
- junction gate
- latching Boolean gate
- logic gate
- logical gate
- magnetic gate
- majority gate
- match gate
- meshed gate
- metal gate
- metal-oxide-semiconductor gate
- mix gate
- molibdenum gate
- MOS gate
- multiemitter gate
- multiple-level gate
- multiple-level logic gate
- NAND gate
- n-channel silicon gate
- negation gate
- negative AND-gate
- negative OR gate
- negative unate gate
- NEITHER-NOR gate
- N-input gate
- nitride gate
- NMOS silicon gate
- noise gate
- nonconjunction gate
- nondisjunction gate
- nonequality gate
- nonequivalence gate
- nonunate gate
- NOR gate
- NOT gate
- NOT-AND gate
- one-nanosecond gate
- opaque gate
- optical gate
- OR gate
- OTHER-OR gate
- out gate
- outer gate
- overlapping gates
- p-channel silicon gate
- PMOS silicon gate
- p-n junction gate
- polysilicon gate
- positive unate gate
- primitive logic gate
- pulse gate
- range gate
- readout gate
- refractory gate
- replicate gate
- resistive insulated gate
- resistively connected gates
- resistor-transistor logic gate
- RTL gate
- sampling gate
- scan gate
- sealed gate
- searching gate
- self-aligned gate
- self-registered gate
- Shottky gate
- Shottky-barrier gate
- silicon gate
- stacked gate
- stated gate
- stateful gate
- stateless gate
- storage gate
- substrate gate
- swap gate
- synchronous gate
- T2L gate
- task gate
- threshold gate
- thyratron gate
- time gate
- top gate
- transfer gate
- transistor-transistor logic gate
- trap gate
- TTL gate
- tunneling cryotron gate
- variable-threshold gate
- V-groove MOS gate
- video gate
- VMOS gate
- write gate
- XNOR gate
- XOR gate
- zero-match gateThe New English-Russian Dictionary of Radio-electronics > gate
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15 gate
1. ім.1)логічний елемент; вентиль; логічна схема2) затвор (напр. польового транзистора); керуючий електрод3) пост; робоче місце4) селекторний [стробуючий] імпульс, строб-імпульс2. дієсл. здійснювати селекцію в часі, стробувати - AND gate
- AND–NOR gate
- AND-NOT gate
- AND-OR gate
- back gate
- Boolean gate
- channelless sea gates
- closed-geometry gate
- coincidence gate
- control gate
- digital logic gate
- digital summation threshold logic gate
- discrete gate
- doped polysilicon gate
- double-input gate
- DSTL gate
- emitter-coupled logic gate
- emitter-coupled gate
- equivalent gate
- erase gate
- exclusive NOR gate
- exclusive OR gate
- expandable gate
- fan-in gate
- fan-out gate
- fault-free gate
- faulty gate
- finger gate
- floating gate
- functional gate
- IIL gate
- I2L gate
- imaging gate
- inclusive OR gate
- inspectation gate
- intrinsic gate
- inverting gate
- isolated gate
- Josephson-junction logic gate
- Josephson logic gate
- Josephson tunneling logic gate
- logic gate
- majority gate
- meander gate
- MOS gate
- MOSFET gate
- multiple-level logic gate
- multiple-level gate
- NAND gate
- negation gate
- negative gate
- negative AND gate
- nitride gate
- NOR gate
- NOT gate
- n+ poly gate
- offset gate
- OR gate
- OR–NOT gate
- polycrystalline silicon gate
- polysilicon gate
- process control gate
- QA gate
- quantum interference Joseph-son gate
- recessed gate
- refractory-metal gate
- replicate/annihilate gate
- resistive gate
- Scholtky-barriergate
- Scholtkygate
- Scholtky TTL gate
- sea gates
- self-aligned gate
- self-registered gate
- single-input gate
- single -logic level gate
- single level gate
- single-poly gate
- stacked gate
- storage gate
- transfer gate
- transistor gate
- variable threshold logic gate
- variable threshold gate
- V-groove MOS gate
- p-gate -
16 buried-channel mos
English-Russian big polytechnic dictionary > buried-channel mos
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17 complementary mos
English-Russian big polytechnic dictionary > complementary mos
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18 dielectric-isolated mos
English-Russian big polytechnic dictionary > dielectric-isolated mos
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19 enhancement/depletion mos
МОП-структура на транзисторах, работающих в режимах обогащения и обедненияEnglish-Russian big polytechnic dictionary > enhancement/depletion mos
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20 n-channel mos
- 1
- 2
См. также в других словарях:
Back-Gate-MOS-Struktur — MOP darinys su apatine užtūra statusas T sritis radioelektronika atitikmenys: angl. back gate MOS structure vok. Back Gate MOS Struktur, f; MOS Struktur mit rückwärtigem Substratanschluß, f rus. МОП структура с нижним затвором, f pranc. structure … Radioelektronikos terminų žodynas
back-gate MOS structure — MOP darinys su apatine užtūra statusas T sritis radioelektronika atitikmenys: angl. back gate MOS structure vok. Back Gate MOS Struktur, f; MOS Struktur mit rückwärtigem Substratanschluß, f rus. МОП структура с нижним затвором, f pranc. structure … Radioelektronikos terminų žodynas
MOS-Struktur mit rückwärtigem Substratanschluß — MOP darinys su apatine užtūra statusas T sritis radioelektronika atitikmenys: angl. back gate MOS structure vok. Back Gate MOS Struktur, f; MOS Struktur mit rückwärtigem Substratanschluß, f rus. МОП структура с нижним затвором, f pranc. structure … Radioelektronikos terminų žodynas
structure MOS à grille inférieure — MOP darinys su apatine užtūra statusas T sritis radioelektronika atitikmenys: angl. back gate MOS structure vok. Back Gate MOS Struktur, f; MOS Struktur mit rückwärtigem Substratanschluß, f rus. МОП структура с нижним затвором, f pranc. structure … Radioelektronikos terminų žodynas
Floating-gate transistor — The floating gate transistor is a kind of transistor that is commonly used for non volatile storage such as flash, EPROM and EEPROM memory. Floating gate transistors are almost always floating gate MOSFETs.Floating gate MOSFETs are useful because … Wikipedia
Floating Gate MOSFET — The Floating Gate MOSFET (FGMOS) is a field effect transistor, whose structure is similar to a conventional MOSFET. The gate of the FGMOS is electrically isolated, creating a floating node in DC, and a number of secondary gates or inputs are… … Wikipedia
MOP darinys su apatine užtūra — statusas T sritis radioelektronika atitikmenys: angl. back gate MOS structure vok. Back Gate MOS Struktur, f; MOS Struktur mit rückwärtigem Substratanschluß, f rus. МОП структура с нижним затвором, f pranc. structure MOS à grille inférieure, f … Radioelektronikos terminų žodynas
МОП-структура с нижним затвором — MOP darinys su apatine užtūra statusas T sritis radioelektronika atitikmenys: angl. back gate MOS structure vok. Back Gate MOS Struktur, f; MOS Struktur mit rückwärtigem Substratanschluß, f rus. МОП структура с нижним затвором, f pranc. structure … Radioelektronikos terminų žodynas
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Metall-Oxid-Halbleiter-Feldeffekttransistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) gehört zu den Feldeffekttransistoren mit isoliertem Gate, auch als IGFET bezeichnet. Er ist den… … Deutsch Wikipedia
Depletion-load NMOS logic — Depletion load nMOS/NMOS (n channel metal oxide semiconductor) is a form of nMOS logic family which uses depletion mode n type MOSFETs as load transistors as a method to enable single voltage operation and achieve greater speed than possible with … Wikipedia
